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个人简介
Robert joined the Texas Instruments (TI) DRAM team in 1989 where he worked closely with process and design engineers to reduce DRAM gate dielectric issues and soft error rate (SER) sensitivity. First at TI to proposed cosmic ray upsets as the dominant source of SER (NOT alpha particles as commonly assumed) and demonstrated that boron-10, ubiquitous in semiconductor processes, was a dominant SER risk in digital electronics. He developed mitigation schemes that were employed across TI, and later, throughout most of the semiconductor industry, enabling 10x reductions in SER.
From 1993 he worked at the TI Japan Mihomura fab where he helped solve DRAM and CPU degradation issues, SER, and package reliability marginalities. He served as technical liaison between international teams and assisted in the establishment of TI’s wafer-level reliability controls. In 1995, Robert transferred to Tsukuba R&D Center, where he created an advanced failure analysis group providing critical analyses for solving high-profile production-stop issues in record time.
研究兴趣
论文共 119 篇作者统计合作学者相似作者
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Andrés Fabián Lasagni,Marcos Soldera,Bogdan Voisiat,Robert Baumann, Nicolas Serey,Herman Heffner, Fabian Ränke, Lukas Olawsky, Stephan Moghtaderifard, Christoph Zwahr
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IEEE Transactions on Nuclear Scienceno. 99 (2024): 1-1
MATERIALS LETTERS (2023): 135007-135007
ACS APPLIED MATERIALS & INTERFACESno. 14 (2023): 18290-18299
Laser-based Micro- and Nanoprocessing XVII (2023)
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Laser-based Micro- and Nanoprocessing XVII (2023)
Lis Geraldine Zschach,Robert Baumann,Flavio Soldera,Claudia Marcela Mendez,Sabine Apelt,Ute Bergmann,Andres Fabian Lasagni
ADVANCED MATERIALS INTERFACESno. 36 (2023): n/a-n/a
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