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MILTON FENG is the Nick Holonyak Jr. Chair Professor of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign. Prof. Feng was born in Taiwan, China. He received his BS degree in electrical engineering from Columbia University (New York) in 1973 and his MS and PhD degrees in electrical engineering from the University of Illinois, Urbana-Champaign, in 1976 and 1979, respectively.
From 1979 to 1983, he was head of the GaAs material and device group at Torrance Research Center, Hughes Aircraft Company, where he was in charge of ion implantation, AsCl3 VPE, MOCVD, and MBE technology. In 1983, he developed a direct ion-implanted low-noise and power MESFET and MMICs for X-band phase array radar application. Dr. Feng demonstrated the first 60-GHz GaAs amplifiers in 1983. From 1984 to 1986, he worked for Ford Microelectronics, Inc., in Colorado Springs, CO, where he managed the advanced digital integrated circuit development program in 1 K SRAM and 500 gate array.
Since 1991, Dr. Feng has been a professor of electrical and computer engineering and a research professor at the Microelectronics Laboratory at the University of Illinois. Prof. Feng invented the pseudomorphic HBT (PHBT), “pushed” the transistor speed boundary toward THz, and demonstrated InP PHBTs with the world’s fastest speed performance (> 800 GHz). Prof. Feng, along with Prof. N. Holonyak, Jr., demonstrated the first laser operation of a quantum-well-based light emitting transistor (QWLET), a transistor laser (TL). A transistor laser opens up a rich domain of integrated circuitry and high speed signal processing that involves both electrical and optical signals.
From 1979 to 1983, he was head of the GaAs material and device group at Torrance Research Center, Hughes Aircraft Company, where he was in charge of ion implantation, AsCl3 VPE, MOCVD, and MBE technology. In 1983, he developed a direct ion-implanted low-noise and power MESFET and MMICs for X-band phase array radar application. Dr. Feng demonstrated the first 60-GHz GaAs amplifiers in 1983. From 1984 to 1986, he worked for Ford Microelectronics, Inc., in Colorado Springs, CO, where he managed the advanced digital integrated circuit development program in 1 K SRAM and 500 gate array.
Since 1991, Dr. Feng has been a professor of electrical and computer engineering and a research professor at the Microelectronics Laboratory at the University of Illinois. Prof. Feng invented the pseudomorphic HBT (PHBT), “pushed” the transistor speed boundary toward THz, and demonstrated InP PHBTs with the world’s fastest speed performance (> 800 GHz). Prof. Feng, along with Prof. N. Holonyak, Jr., demonstrated the first laser operation of a quantum-well-based light emitting transistor (QWLET), a transistor laser (TL). A transistor laser opens up a rich domain of integrated circuitry and high speed signal processing that involves both electrical and optical signals.
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OPTICS EXPRESSno. 7 (2023): 11408-11422
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2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)pp.1-3, (2021)
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2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)pp.1-3, (2021)
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