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个人简介
Masaharu Kobayashi (M’09) received the B.S. and M.S. degrees in electronics engineering from the University of Tokyo, Tokyo, Japan, in 2004 and 2006, respectively, and the Ph.D. degree in electronics engineering from Stanford University, Stanford, CA, USA.
He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, USA, in 2010, where he researched on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel, and III-V channel. He was also engaged in launching 14-nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor with the Institute of Industrial Science, University of Tokyo, where he has been working on ultralow power transistor and memory technology.
Dr. Kobayashi is a member of the Japan Society of Applied Physics.
研究兴趣
论文共 13 篇作者统计合作学者相似作者
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2024 IEEE Silicon Nanoelectronics Workshop (SNW)pp.61-62, (2024)
Kaito Hikake,Xingyu Huang, Sung-Hun Kim, Kota Sakai, Zhuo Li,Tomoko Mizutani,Takuya Saraya,Toshiro Hiramoto,Takanori Takahashi, Mutsunori Uenuma,Yukiharu Uraoka,Masaharu Kobayashi
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2024)
2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)pp.76-77, (2024)
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)
IS&T International Symposium on Electronic Imaging Science and Technologyno. 7 (2022): 258-4
openalex(2022)
JAPANESE JOURNAL OF APPLIED PHYSICSno. SC (2022)
Japanese Journal of Applied Physicsno. 4 (2022)
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 12 (2021): 6617-6622
openalex(2021)
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作者统计
#Papers: 13
#Citation: 40
H-Index: 3
G-Index: 6
Sociability: 4
Diversity: 0
Activity: 0
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