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论文共 23 篇作者统计合作学者相似作者

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Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
C. Leurquin, W. Vandendaele, M.-A. Jaud, R. Lavieville,B. Mohamad, C. Masante, G. Despesse, E. Nowak
IEEE Transactions on Electron Devicesno. 99 (2024): 1-7
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Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations
C. Piotrowic,B. Mohamad, P. Fernandes Paes Pinto Rocha, N. Malbert, S. Ruel, P. Pimenta-Barros, M.-A. Jaud, L. Vauche,C. Le Royer
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.382-385, (2023)
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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)
W. Vandendaele, C. Leurquin, R. Lavieville, M.A Jaud, A.G. Viey, R. Gwoziecki,B. Mohamad, E. Nowak, A. Constant, F. Iucolano
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-8, (2023)
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Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
P. Fernandes Paes Pinto Rocha,L. Vauche, M. Bedjaoui,S. Cadot,B. Mohamad, W. Vandendaele,E. Martinez,N. Gauthier, F. Pierre, H. Grampeix,G. Lefevre, B. Salem,
Solid-State Electronics (2023): 108780-108780
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Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications
B. Mohamad,C. Le Royer, F. Rigaud-Minet, C. Piotrowicz, P. Fernandes Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier,J. Buckley, S. Bécu,J. Biscarrat, R. Gwoziecki
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTMpp.1-3, (2023)
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Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT
P. Fernandes Paes Pinto Rocha,L. Vauche,B. Mohamad, W. Vandendaele,E. Martinez, M. Veillerot,T. Spelta, N. Rochat, R. Gwoziecki,B. Salem,V. Sousa
Power Electronic Devices and Components (2023): 100033
引用4浏览0引用
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Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures
S. Zoino, Łukasz Borowik,B. Mohamad, E. Nowak,Paweł Kempisty
Journal of Applied Physicsno. 15 (2023)
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