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Ananth Saran Yalamarthy received the B.Tech. degree in mechanical engineering from the Indian Institute of Technology, Madras, India, in 2014, and the Ph.D. degree in mechanical engineering from Stanford University, Stanford, CA, USA, in April 2019.
His research interests are in the intersection of energy, electronics, and MEMS devices, with a special focus on wide-band gap materials. At X Laboratory, his research was focused on using the polarization fields in the AlGaN/GaN heterostructure for energy harvesting and sensing applications. In the summer of 2016, he completed an Internship at Qualcomm Research, San Diego, CA, USA, where he worked on algorithms for glass-based MEMS motion sensors.
Dr. Yalamarthy was a recipient of the Qualcomm Roberto Padovani scholarship in 2016, a Baker-Hughes FMA in 2015, and a DAAD-WISE Scholarship in 2013.
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Photodetectorspp.267-291, (2023)
IEEE Sensors Journalno. 2 (2022): 1245-1251
2021 IEEE AEROSPACE CONFERENCE (AEROCONF 2021)pp.1-12, (2021)
IEEE Journal of the Electron Devices Society (2020): 716-716
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