A Comparative Analysis of Electrical and Optical Thermometry Techniques for AlGaN/GaN HEMTs

Seokjun Kim, Daniel C. Shoemaker,Anwarul Karim, Husam Walwil, Matthew T. DeJarld, Maher B. Tahhan, Jarrod Vaillancourt, Eduardo M. Chumbes, Jeffrey R. Laroche,Georges Pavlidis, Samuel Graham, Sukwon Choi

IEEE Transactions on Electron Devices（2024）

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Electrothermal effects,gallium nitride (GaN),gate resistance thermometry (GRT),high electron mobility transistors (HEMTs),Raman spectroscopy,thermal management of electronics,thermoreflectance

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