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Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors

Tae Won Park, Jiwon Moon, Dong Hoon Shin,Hae Jin Kim, Seung Soo Kim, Jea Min Cho, Hyungjun Park,Kyung Seok Woo, Dong Yun Kim,Sunwoo Cheong,Haewon Song,Jong Hoon Shin, Soo Hyung Lee,Nestor Ghenzi, Cheol Seong Hwang

ACS APPLIED MATERIALS & INTERFACES（2024）

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关键词
charge-trap,self-rectifying,memristor,V-RRAM,retention,uniformity
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