Edge-Field-Suppression for Improved Breakdown and Leakage in Vertical $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky Barrier Diode Through Trench Field Limiting Rings
IEEE Transactions on Electron Devices（2024）
关键词
Field limiting ring (FLR),gallium oxide (Ga $_{\text{2}}$ O $_{\text{3}}$ ),Schottky diodes,trench
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