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Two-Phase Immersion Cooler for Medium-Voltage Silicon Carbide MOSFETs

2024 23rd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)(2024)

Department of Mechanical Engineering | Department of Electrical Engineering and Computer Science

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Abstract
Medium-voltage (MV) silicon carbide (SiC) MOSFETs play a pivotal role in various industrial applications, including electrical vehicles, DC fast charging stations, and renewable energy conversion systems, among others. Compared to their silicon counterparts, the MV SiC MOSFETs feature higher efficiency, faster switching speeds, lower heat generation, and higher power density. Despite their advantages, SiC MOSFETs also lead to higher cooling demands. To address this challenge, we have developed a two-phase immersion cooler, in which the base plate is immersed in the liquid pool, and vapor generated from coolant boiling on the base plate is condensed on the top surface of the immersion cooler under external air cooling. To further improve the cooling capacity, the base plates are textured with microchannels. Experimental tests have been performed to characterize the thermal performance of the two-phase immersion cooler with a state-of-the-art 6.5kV SiC device. The immersion cooler with microchannels exhibits decreasing thermal resistance with the power load and is shown to be superior to conventional air-cooled heat sinks when the power loads are beyond 70 W. Leveraging the feature of reduced thermal resistance with the power load, the fan power can be tuned based on the power load to increase the lifetime of the fans.
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Key words
immersion cooling,SiC MOSFET,two-phase heat transfer,microchannels
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要点】:本研究开发了一种用于中压硅碳化物(SiC) MOSFETs的两相沉浸式冷却器,通过微通道纹理化基板以提高冷却性能,实现了比传统空气冷却热沉更优的热管理效果。

方法】:通过在基板上设计微通道纹理,将基板浸入冷却液中,利用冷却液在基板上沸腾产生的蒸汽在冷却器顶部表面冷凝,并结合外部空气冷却来提高冷却效率。

实验】:使用先进的6.5kV SiC设备进行了实验测试,实验结果表明,带有微通道的沉浸式冷却器随着功率负载的增加,热阻减小,并在功率负载超过70W时,表现出优于传统空气冷却热沉的性能。