Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
Laser lift-off,fully vertical GaN,deep-level transient spectroscopy,electron trap,leakage mechanism
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