Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Chenkai Deng,Peiran Wang,Chuying Tang,Qiaoyu Hu,Fangzhou Du,Yang Jiang, Yi Zhang,Mujun Li, Zilong Xiong, Xiaohui Wang,Kangyao Wen,Wenmao Li,Nick Tao,Qing Wang,Hongyu Yu

Nanomaterials (Basel, Switzerland)（2024）

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Key words
GaN HEMTs,RF,gate leakage,SiN,stress-engineered
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