Examination of Nonideal Film Growth in Batch Atomic Layer Deposition for Plasma-Resistant Coatings

Atomic layer deposition (ALD) can be used to fabricate protective coatings including moisture barrier layers for organic light emitting diodes, anticorrosion layers for photoelectrodes, and plasma-resistant coating for semiconductor manufacturing equipment, which necessitates the deposition of large and thick ALD films via batch ALD. However, batch ALD for the fabrication of large-area and thick coatings exhibits nonideal film growth, a phenomenon that cannot solely be explained by transient concentration distribution within the deposition chamber. This paper describes the application of precursor “exposure” (in the unit of Langmuir, or Pa s), defined as the integral of concentration over time, as a metric to assess the growth per cycle (GPC) distribution under nonideal ALD conditions, demonstrating that the local GPC correlates well with the cumulative precursor exposure at that site. Consequently, this measure can effectively predict the nonuniformity (NU) distribution of film thickness and facilitate the determination of optimal operating conditions that ensure maximal uniformity of exposure. Under this condition, the intrafilm NU of ALD-grown Al2O3 film (nominal thickness 300 nm) was reduced to 1.2%, and the interfilm NU is diminished to as low as 3.3%. These values represent reductions of 40% and 45%, respectively, compared to the NU levels observed under nonideal conditions (insufficient trimethylaluminum, TMA exposure downstream). The plasma etch rate of ALD-deposited films is merely 4.3 nm/min, representing a reduction of one-half compared to films deposited under nonideal conditions (9.8 nm/min) with overload TMA exposure downstream leading to chemical vapor deposition-like reactions.