Improved Performance of Planar Vacuum Field Emission Transistors Via Angled Gates and Extended Anode

Vacuum field emission transistors (VFETs) have recently gathered significant attention. A primary obstacle to the widespread adoption of VFETs is the low electron transmission rate resulting from electrons being intercepted by the gates. In this study, we propose a planar VFET design featuring angled gates and extended anode. Using a particle tracking simulation method, the output and transfer curves of these devices were obtained. Analysis reveals that angled gates effectively reduce the number of electrons intercepted by the gates, thereby increasing the electron transmission rate from 17.96% to 78.03%. Furthermore, the incorporation of an extended anode mitigates the sharp increase observed in the output curves to a certain extent. These findings demonstrate a substantial enhancement in the performance of planar VFETs through structural modification, laying a solid foundation for the future development of VFETs for signal amplifier applications.