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Enhancement of Positive Bevel Β-Ga2o3 Trench Mos Barrier Schottky Diode by Post-Etching Treatment

Fang Zhang,Xue Feng Zheng, Ye Hong Li,Zi Jian Yuan,Shao Zhong Yue, Xi Chen Wang, Yun Long He,Xiao Li Lu,Xiao Hua Ma,Yue Hao

Applied Surface Science（2024）

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Key words
β-Ga2O3,Trench MOS barrier Schottky (TMBS),Positive bevel,Post-etching treatment
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