Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part I: Vertical Transistor on Gate (VTG) DRAM Cell Structure
IEEE Transactions on Electron Devices（2024）
关键词
Random access memory,Transistors,Computer architecture,Couplings,Logic gates,Microprocessors,Mathematical models,Device characterization,nondestructive read operation,parasitic coupling effects,TCAD simulation,vertical-transistor on gate (VTG)
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