Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects
Symposium on VLSI Technology(2024)
Key words
CMOS area scaling,semi-damascene,defect mitigation layer (DML),direct-metal-etch (DME),ruthenium,interconnects
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