A Novel Method to Determine Bias-Dependent Source and Drain Parasitic Series Resistances in AlGaN/GaN High Electron Mobility Transistors

Guangyuan Jiang,Chen Fu,Yang Liu,Guang Yang,Peng Cui,Guangyuan Zhang,Yuanjie Lv,Zhaojun Lin

Solid-State Electronics（2024）

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关键词
AlGaN/GaN HEMTs,Small-signal,Parasitic series resistances,Bias-dependent,Polarization Coulomb field scattering
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