Investigation of Traps Effect on 2D-Mos2 Photoresistor

Effects of traps on the monolayer MoS 2 photoresistor are investigated. An analytical model is utilized to study the impact of the density and energy level of the traps on the photocurrent and absorbance of photoresistors. To ensure the validity of the model the results from the model are compared with reported results and found to agree. This model is also used in studying the effects of strain on the MoS 2 monolayer Photoresistor, as reported in [1].