Broadband Low-Noise Ka-Band Front-End MMIC in a 0.15-Μm GaN-on-SiC HEMT Technology
2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024（2024）
关键词
Front-end modules (FEMs),gallium nitride (GaN),high-electron-mobility transistors (HEMTs),low-noise amplifiers (LNAs),millimeter wave (mmW),monolithic microwave integrated circuits (MMICs),power amplifiers (PAs),single-pole double-throw (SPDT),switches
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