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2.3 Kv GaN Super-Heterojunction FET for Cryogenic Power Switching

Mansura Sadek,Jesse T. Kemmerling, Ajay Kumar Visvkarma,Rian Guan, Yixin Xiong,Jianan Song,James Spencer Lundh, Karl D. Hobart,Travis J. Anderson,Rongming Chu

Device Research Conference（2024）

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Key words
Decrease In Temperature,Carrier Mobility,Open Voltage,Cryogenic Temperatures,SiC MOSFET,I-V Curves,High Bias,Charge Balance,Gate Leakage,Source Leakage,Metal Stack
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