Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs Up to 500°C
Device Research Conference（2024）
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High Temperature,High Electron Mobility Transistors,High-temperature Performance,Wide Bandgap,Electronic Applications,High Power Density,Geothermal,Silicon Carbide,Semiconductor Devices,Chemical Plant,Wide Bandgap Semiconductor,Gallium Nitride,Jet Engine,Low Carrier Concentration,High Performance,Gate Leakage,Metal Stack
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