Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel

The conditions for the growth of n-type Ge layers with the parameters required to create a Ge-MISFET with an induced p-type channel using the hot wire chemical vapor deposition (HW CVD) method are determined. The conditions for deposition using electron beam deposition and subsequent annealing of the subgate high-k dielectric ZrO2:Y2O3 layers are optimized, allowing us to achieve a leakage current value of 5 × 10–6 A/cm2. For the developed device structure, some parameters of the Ge-MISFET are calculated, such as the channel length, maximum voltage between the sink and source, and breakdown voltage.