Formation Mechanism of TiC Twin During Densification of SiCf/Ti2AlNb Composites

SiCf/Ti2AlNb composites were fabricated using the magnetron sputtering precursor wires method in conjunction with the hot isostatic pressing (HIP) technique. The morphology, elemental distribution, and structural characteristics of the interfacial reaction layer (RL) were examined through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wavelength dispersive spectroscopy (WDS). The results showed that the interface between SiC fibers and Ti2AlNb reacted to form TiC and alpha 2. Due to the interdiffusion of elements at the interface, a small amount of Al atoms existed in the TiC layer. These Al atoms reduced the stacking fault energy (SFE) of TiC, which is beneficial for the formation and stability of Sigma 3{1 1 1} twin boundaries.