Electrifying Sustainability: Synthesis of BaS:NiS:Gd2S3 Semiconductor Trichalcogenides Via Single-Source Precursors for Optimal Supercapacitor Operation

The scientific community and energy stakeholders have placed a great deal of emphasis on electrochemical energy storage in the current era of increased energy demand. Using the unique BaS:NiS:Gd2S3 semiconductor chalcogenide, which is produced using diethyldithiocarbamate ligand as a chelating agent, the current work aims to improve the functionality of charge storage devices and water splitting for energy production. The light absorption of the sustainably produced BaS:NiS:Gd2S3 semiconductor rendered it an excellent photoactive material with the 2.93 eV of the energy band gap. The produced chalcogenide’s average crystallite size, with the mixed crystalline phases, was 17.61 nm, demonstrating exceptional crystallinity. Moreover, metallic sulfide linkages were explored using infrared spectroscopy, and they were located between 400 and 1000 cm−1. Particles with variable shapes and a roughly rod-shaped fusion indicated a higher volume-surface area ratio and the presence of several sites. The BaS:NiS:Gd2S3 electrochemical performance was evaluated using a standard three-electrode setup with a background electrolyte of 1 M KOH. BaS:NiS:Gd2S3, with a specific power density of 5674.08 W kg−1 and a specific capacitance of up to 745.55 F g−1, is a great electrode material for energy storage applications. The comparable series resistance (Rs) of 1.14 Ω further supported this significant electrochemical performance. In terms of the electrochemical water splitting, the OER Tafel slope value is 87 mV/dec, respectively, suggested by the electrochemical data for the OER activity. This electrode produced a Tafel slope of 281 mV/dec and a HER overpotential value of 276 mV.