Impact of High-Temperature Forward Bias Stress on the Electrical Performance Degradation of $\Beta$-Ga$_{\text{2}}$o$_{\text{3}}$ Schottky Barrier Diodes
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Electrical performance,Ga(2)O(3 )Schottky barrier diode (SBD),high-temperature forward bias (HTFB) stress,interface state,Electrical performance,high-temperature forward bias (HTFB) stress,interface state
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