Studying the Suppression of Quantum Well Intermixing in Primary Epitaxial Wafers Via Oxygen Ion Bombardment

In the pursuit of creating non-absorption window (NAW) structures in high-power semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid thermal annealing induced quantum well intermixing were employed. The challenge is to induce a desired 30 nm blue shift while safeguarding the gain-emitting region from high-temperature annealing O2− bombardment effectively inhibits quantum well mixing, as demonstrated through experiments. Epitaxial wafers subjected to this treatment exhibit just a 1 nm blue shift, compared to 32 nm without O2− bombardment. These findings provide essential insights for protecting the gain-emitting region during NAW structure fabrication.