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Al-Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Julien Bassaler,Jash Mehta,Idriss Abid, Leszek Konczewicz,Sandrine Juillaguet, Sylvie Contreras, Stephanie Rennesson,Sebastian Tamariz, Maud Nemoz,Fabrice Semond,Julien Pernot, Farid Medjdoub,Yvon Cordier,Philippe Ferrandis

ADVANCED ELECTRONIC MATERIALS（2024）

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关键词
AlGaN channel high electron mobility transistor,electron mobility,silicon substrate,temperature operation,ultrawide bandgap
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