Verifying the Physical Role of Upper-Active-layer on Charge Transport Together with Bias Stability in Bilayer-Channel Oxide Thin-Film Transistors

Jinuk Lee,Jun-Su Eun,Jeong-Hyeon Na,Won Park,Jun-Hyeong Park,Junhao Feng,Jaewon Jang,In Man Kang,Jaehoon Park,Xue Zhang,Do-Kyung Kim,Jin-Hyuk Bae

SURFACES AND INTERFACES（2024）

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关键词
Thin-film transistors,Oxide semiconductor,Bilayer structure,Charge transport characteristics,Bias stability,Carrier concentration engineering
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