Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors.

Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C & horbar;C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 mu A per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits. Carbon nanotubes (CNTs) are doped by filling with 1D halide perovskites to form CsPbBr3/CNT coaxial heterojunctions. Not only can stable n-type-doped CNT field-effect transistors be achieved, but also, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) can be constructed. The optimized quasi-BG TFET exhibits a subthreshold swing of 35 mV dec-1 at room temperature. It paves the way for constructing high-performance and ultralow power consumption integrated circuits. image