Electronic properties of magnetic semiconductor CuMnO_2 : a first principles study
arxiv(2024)
摘要
Geometrically frustrated magnetic semiconductor CuMnO_2 has
potential applications as photo-catalyst, in photochemical cells and
multi-ferroic devices. Electronic band structure in the antiferromagnetic and
ferromagnetic phases of CuMnO_2 were calculated using first
principle density functional theory (DFT) as implemented in VASP. Electronic
band structure in the antiferromagnetic state shows indirect band gap (∼
0.53 eV) where as in the ferromagnetic state it shows half-metallic state with
100% spin polarization. The half-metallic state arises due to double
exchange mechanism. In the half-metallic state the density of states for the
up spin channel shows asymmetric power law behaviour near the Fermi level while
the down spin channel shows fully gapped behaviour. The calculated magnetic
moment of Mn atom in the ferromagnetic (3.70 μ_B) and antiferromagnetic
(3.57 μ_B) states are consistent with experimental values. Our
calculation predicts potential application of CuMnO_2 in
spintronic devices especially in the ferromagnetic state, as a spin injector
for spin valves in spintronic devices.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要