Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy
Frontiers of Physics(2024)
Abstract
The van der Waals interface structures and behaviors are of great importance in determining the physical properties of two-dimensional atomic crystals and their heterostructures. The delicate interfacial properties are sensitively dependent on the mechanical behaviors of atomically thin films under external strain. Here, we investigated the strain-engineered rippling structures at the CVD-grown bilayer-MoS2 interface with advanced atomic force microscopy (AFM). The in-plane compressive strain is sequentially introduced into the 1L-substrate and 2L-1L interface of bilayer-MoS2 flakes via a fast-cooling process. The thermal strain-engineered rippling structures were directly visualized at the central 2H- and 3R-MoS2 bilayer regions with friction force microscopy (FFM) and bimodal AFM techniques. These rippling structures can be further artificially manipulated into the beating-like rippling features and fully erased via the contact mode AFM scanning. Our results shed lights on the strain-engineered interfacial structures of two-dimensional materials and also inspire the further investigation on the interface engineering of their electronic and optical properties.
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Key words
rippling,interface,strain-engineered,atomic force microscopy,transition metal dichalcogenides
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