Analysis of Interface Trap Induced Ledge in Β-Ga2o3 Based MOS Structures Using UV-assisted Capacitance-Voltage MeasurementsAditya K. Bhat,Hyun-Seop Kim,Abhishek Mishra,Matthew D. Smith,Michael J. Uren,Martin KuballJOURNAL OF APPLIED PHYSICS（2024）引用 0|浏览13暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
