The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-Nm and 90-Nm SiGe HBTs

D. Nergui, M. Hosseinzadeh, Y. A. Mensah, H. P. Lee, D. G. Sam, K. Li, E. X. Zhang,D. M. Fleetwood,John D. Cressler

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024（2024）

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SiGe HBT,reliability,mixed-mode stress,hot carriers,ionizing radiation,total-ionizing dose

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