Enhancing Performance of Silicon/graphene Composites by Transition Lattice Interfaces Constructed using Plasma

The silicon-based (Si) anodes have not widely used due to their low conductivity and severe irreversible volume changes until now. Graphene (G) is considered a promising material for inhibiting volume expansion and enhancing conductivity of Si, a large amount of work has been exploring effective composite of graphene and silicon. A new SiG composite structure (PB-SiG-1) with transition lattice interface is provided by N plasma assisted technique in this work. The phase interface undergoes lattice changes on the atomic scale with silicon, oxygen, and carbon bonding in new chemical bonds (Si-O-C). More importantly, the lattice spacing of Si (111) increases from 0.31nm to 0.325nm due to the insertion of carbon or oxygen atom into the Si body, which promotes the diffusion kinetics of lithium ions. This PB-SiG-1 exhibits better electrochemical performance with reversible specific capacity of 2013.9 mAh g−1 after 100 cycles at 0.2 A g−1, high capacity retention of 98.53% and coulombic efficiency of 99.4%. The multiple advanced in situ methods reveal that the PB-SiG-1 not only has the ability to quickly transfer ions, electrons, and form stable SEI, but also has a low irreversible volume expansion of 33.1%. This proves that the transition lattice interface endows PB-SiG-1 with isotropy characteristic of lithium diffusion, leading to dynamically stable electrodes during cycles. This work proposes a Si-C composite structure with transition lattice interface, which opens a new insight for volume expansion and lithium transmission in Si-C composite.