Ga₂O₃/GaN Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection

The high-performance Ga ₂ O ₃ /GaN based ultraviolet photodetector with a planar heterojunction phototransistor (HPT) structure is demonstrated in this work. Attributting to the light-modulation effect in the HPT structure, the device exhibits a linear dynamic range (LDR) exceeding 88.4 dB at low voltage level of 0.3 V. Meanwhile, it holds great promise in delivering rapid response speeds, in which the rise time and fall time are 10.8 ms and 1.9 ms/11.3 ms, respectively. Additionally, a peak responsivity of 0.057 A/W under 241 nm illumination wavelength and a specific detectivity of 1.08×10 ¹⁰ Jones are achieved at 0.3 V.