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A Comparative Study of DFT and Experimental Investigations for Exploring the Effect of Ti Doping on the Electronic, Structural, and Optical Properties of Cu2O

Muhammad Kamran Tahir Malik, M. Fakhr-e-Alam,Farman Ullah,Shahid M. Ramay,Murtaza Saleem

PHYSICA B-CONDENSED MATTER(2024)

Govt Coll Univ | Univ Warmia & Mazury | King Saud Univ | Lahore Univ Management Sci LUMS

Cited 0|Views7
Abstract
The current study presents the influence of Ti doping on the electronic, structural, and optical properties of Cu2O. The investigation employs a comparative approach, integrating theoretical calculations using density functional theory and experimental outcomes. Density of states spectra depicted the maximum contribution of Cu-d and O-p in the valence band, whereas Ti-d states filled the conduction band. Structural changes induced by Ti doping, including variations in peak intensity, crystallite size, and defects were examined in detail by X-ray diffraction analysis. The field emission scanning electron microscopy described grain morphology significantly changing upon Ti doping. Optical properties were scrutinized to determine variations in optical parameters. For both un-doped and Ti-doped Cu2O, the experimentally measured band gap was found to be decreased, ranging from 2.05 eV to 1.69 eV. The comparative studies enable a valuable understanding of the effectiveness of Ti doping in modifying the properties of Cu2O.
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Thin films,DFT,Electronic properties,Optical properties,Spin coating
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要点】:本文研究了Ti掺杂对Cu2O电子、结构和光学性质的影响,通过比较密度泛函理论(DFT)计算和实验结果,揭示了Ti掺杂在调控Cu2O性质方面的有效性。

方法】:研究采用理论计算与实验相结合的方法,利用密度泛函理论进行电子结构分析,并通过X射线衍射和场发射扫描电子显微镜等技术进行结构分析。

实验】:通过实验测量了未掺杂和Ti掺杂的Cu2O的带隙,发现带隙从2.05 eV降低至1.69 eV,使用的数据集名称未在文中明确提及。