Electrically Active Defects Induced by Thermal Oxidation and Post-Oxidation Annealing of N-Type 4H-Sic P. Kumar,M. E. Bathen, M. I. M. Martins, T. Prokscha,U. GrossnerJOURNAL OF APPLIED PHYSICS（2024）引用 0|浏览4暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
