A 1T1M Programmable Artificial Spiking Neuron Via the Integration of FeFET and NbOx Mott Memristor
IEEE ELECTRON DEVICE LETTERS(2024)
摘要
In this study, we present a one-transistor-one-memristor (1T1M) programmable artificial spiking neuron, achieved through the integration of a Hf 0.5 Zr 0.5 O 2 ferroelectric transistor (FeFET) and a NbO x Mott memristor. The FeFET’s threshold voltage, configurable by a gate write pulse ( Vpulse ), exhibits excellent retention properties, enabling the storage of data in multiple states. Simultaneously, the NbO x Mott memristor, characterized by threshold switching and high stability, is driven by the FeFET, allowing for the generation of diverse spike rates corresponding to the storage states of the FeFET. Consequently, a programmable artificial spiking neuron is realized, with its states precisely configured by Vpulse to accurately transmit the encoded neuromorphic spikes. This achievement lays the groundwork for the development of spiking neural networks (SNNs).
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关键词
Artificial spiking neuron,NbOx,Mott memristor,doped HfO2,FeFET,programmable neuron
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