A Scalable Ferroelectric Non-Volatile Memory Operating at 600 °CDhiren K. Pradhan,David C. Moore,Gwangwoo Kim,Yunfei He,Pariasadat Musavigharavi,Kwan-Ho Kim, Nishant Sharma,Zirun Han,Xingyu Du,Venkata S. Puli,Eric A. Stach,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep JariwalaNATURE ELECTRONICS（2024）引用 0|浏览29暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
