Surface Passivation of Silicon Substrate by Ternary GaxCeyOz Layers Grown Via Combination of Forming Gas and Oxygen at Different Temperatures
Ceramics international（2024）
关键词
GaxCeyOz,high dielectric constant,passivation layer,gate oxide,forming gas,energy efficiency,metal-oxide-semiconductor,capacitor
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要