Magnitosoprotivlenie dvoynoy kvantovoy yamy HgTe/CdHgTe v parallel'nom magnitnom pole

A magnetic field parallel to the layers of a double quantum well with conventional semiconductor constituentsleads to a relative shift of the conduction band spectra of the constituent layers along the wave vector perpendicularto the field. If the states of the layers are tunnel-coupled, a tunneling gap is formed at the intersectionof the single-layer spectra and is shifted upward with increasing field. This leads to striking features in themagnetoresistance caused by intersections of the Fermi level with the edges of the tunneling gap. Similarstudies of transformations of the spectrum of the double quantum well in a HgTe/CdHgTe heterosystem,which has a p-type conductivity and HgTe layers with a gapless inverse energy spectrum, are reported in thiswork. Our experiments and corresponding calculations in the eight-band kp approach indicate that the evolutionof the magnetoresistance with the variation of the in-plane field here has a much more complex anddiverse character depending qualitatively on the thickness of the layers.