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Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Jaewook Yoo, Hyeun Seung Jo,Seung-Bae Jeon,Taehwan Moon, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon,Soyeon Kim, Minah Park, Seohyeon Park, Jo Hak Jeong,Keun Heo,Yoon Kyeung Lee,Peide D. Ye, TaeWan Kim,Hagyoul Bae

Advanced Electronic Materials（2024）

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Key words
amorphous oxide semiconductor,gamma-ray irradiation,indium gallium zinc oxide,multiple-wavelength light source,subgap density-of-states
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