AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

David Maria Tobaldi,Luc Lajaunie,Arianna Cretì,Massimo Cuscunà,Iolena Tarantini,Marco Esposito,Gianluca Balestra,Mauro Lomascolo,Adriana Passaseo,Vittorianna Tasco

CrystEngComm（2024）

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摘要

The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based...

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