A Universal Gain Theory of the Multiplying Layer in EBCMOS Based on Elastic and Inelastic Scattering

Wene Chen,Weijun Chen,De Song,Peng Zhao,Ye Li, Shuhan Li,Chongxiao Wang, Rongxuan Liang, JiPeng Yue

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS（2024）

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EBCMOS,Stopping power,Charge collection efficiency,Gain

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