Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
IEEE ELECTRON DEVICE LETTERS（2024）
关键词
Thin film transistors,Logic gates,Lithography,Electrodes,Stress,Substrates,Iron,Oxide semiconductor thin-film transistors,Al-doped InZnSnO (AIZTO),deep submicron channel length,subthreshold swing,drain-induced barrier lowering
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