Study of the Mechanism of Single Event Burnout in Lateral Depletion-Mode Ga2O3 MOSFET Devices Via TCAD SimulationKejia Wang,Zujun Wang,Rongxing Cao, Hanxun Liu, Wenjing Chang,Lin Zhao,Bo Mei,He Lv,Xianghua Zeng,Yuxiong XueJOURNAL OF APPLIED PHYSICS（2024）引用 0|浏览28暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
