Design and Simulation of a III-Nitride Light Emitting Transistor

This paper describes the design and characteristics of monolithicallyintegrated three-terminal gated III-Nitride light emitting diodes (LEDs)devices. The impact of channel doping and thickness on the voltage penalty ofthe transistor-LED hybrid device is analyzed, and it is shown that withappropriate design, low voltage drop can be realized across integrated gatedLED structures. The impact of device design on the switching charge isinvestigated, and it is shown that the adoption of an integrated LED/transistorstructure can reduce the switching charge necessary for operation of a switchedLED display device by an order of magnitude when compared with stand-alonelight-emitting diodes.