Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors

Hannes Hergert,Mario F. Zscherp,Philip Klement,Joerg Schoermann,Sangam Chatterjee,Peter J. Klar,Matthias T. Elm

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2024）

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cryogenic temperatures,gallium nitride nanowire,mesoscopic transport properties,nanowire field-effect transistors,phase coherence length,universal conductance fluctuations

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