Dependence of the Spill Back Effect on the Energy Level Distribution of Interface States under the Transfer Gate in CMOS Image Sensor
IEEE SENSORS JOURNAL（2024）
关键词
Scattering,Electrons,Interface states,Sensors,Surface roughness,Rough surfaces,Capacitance,(Si/SiO2)TG interface states,CMOS image sensor (CIS),Coulomb scattering mobility,spill back effect
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