Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors with ~140-Nm Gate Length
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Logic gates,Temperature measurement,MODFETs,HEMTs,Performance evaluation,Metals,Wide band gap semiconductors,AlGaN/GaN high electron mobility transistors (HEMTs),degradation,high temperature (HT) electronics,leakage,time-dependence,transconductance
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